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| Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET Phase Leg Topology FMM50-025TF 3 3 5 5 4 4 VDSS ID25 T1 RDS(on) trr(typ) = = = 250V 30A 50m 84ns T2 1 1 2 2 ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 ... +150 150 -55 ... +150 C C C ~V C C N/lb. 1 Isolated Tab 50/60HZ, RMS, t = 1min, leads-to-tab 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force 2500 300 260 20..120/ 4.5..27 5 Features Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Symbol VDSS VDGR VGSM ID25 IDM IA EAS dV/dt PD Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 250 250 30 30 130 25 400 15 125 V V V A A A mJ V/ns W Advantages Low gate drive requirement High power density Fast intrinsic rectifier Low drain to ground capacitance Fast switching Applications DC and AC motor drives UPS, solar and wind power inverters Synchronous rectifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies Symbol CP dS ,dA dS ,dA Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal Characteristic Values Min. Typ. Max. 40 1.7 5.5 9 pF mm mm g (c) 2008 IXYS CORPORATION, All rights reserved DS100040(09/08) FMM50-025TF Symbol Test Conditions2 (TJ = 25C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions3 VGS = 0V Repetitive, pulse width limited by TJM IF = 50A, VGS = 0V, Note 1 IF = 25A, -di/dt = 250A/s VR = 100V, VGS = 0V 84 15.4 0.65 0.15 VGS= 10V, VDS = 0.5 VDSS, ID = 25A Resistive Switching Times VGS = 15V, VDS = 0.5 VDSS, ID = 25A RG = 5 (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 1mA VDS = VGS, ID = 250A VGS = 20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 25A, Note 1 VDS = 10V, ID = 25A, Note 1 35 58 4000 410 60 14 25 47 25 78 19 22 TJ = 125C Characteristic Values Min. Typ. Max. 250 2.5 4.5 100 V V nA ISOPLUS i4-PakTM Outline 1 A 150 A 50 m S pF pF pF ns ns ns ns nC nC nC 1.0 C/W C/W Ref: IXYS CO 0077 R0 Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 30 200 1.5 A A V ns C Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 |
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